linear & power amplifiers - chip 3 3 - 142 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC863 v00.1109 general description features functional diagram the HMC863 is a three stage gaas phemt mmic 1/2 watt power ampli er which operates between 24 and 29.5 ghz. the HMC863 provides 27 db of gain, and +27 dbm of saturated output power at 18% pae from a +6v supply. the rf i/os are dc bloc- ked and matched to 50 ohms for ease of integration into multi-chip-modules (mcms). all data is taken with the chip in a 50 ohm test xture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). saturated output power: +28 dbm @ 18% pae high output ip3: +39 dbm high gain: 27 db dc supply: +6v @ 375ma 50 ohm matched input/output die size: 2.41 x 0.95 x 0.1 mm electrical speci cations, t a = +25 c, vdd = +6v, idd = 375ma [1] typical applications the HMC863 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat ? military & space parameter min. typ. max. min. typ. max. units frequency range 24 - 27 27 - 29.5 ghz gain 24 27 22 25 db gain variation over temperature 0.0375 0.05 db/ c input return loss 17 11 db output return loss 15 11 db output power for 1 db compression (p1db) 24 27 23 26 dbm saturated output power (psat) 28 27 dbm output third order intercept (ip3) [2] 37 38 dbm total supply current (idd) 375 375 ma [1] adjust vgg between -2 to 0v to achieve idd= 375ma typical. [2] measurement taken at +6v @ 375ma, pout / tone = +16 dbm gaas phemt mmic ? watt power amplifier, 24 - 29.5 ghz
linear & power amplifiers - chip 3 3 - 143 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature HMC863 v00.1109 gaas phemt mmic ? watt power amplifier, 24 - 29.5 ghz -30 -20 -10 0 10 20 30 21 22 23 24 25 26 27 28 29 30 s21 s11 s22 frequency (ghz) response (db) -30 -25 -20 -15 -10 -5 0 24 25 26 27 28 29 30 +25c +85c -55c frequency (ghz) return loss (db) 18 20 22 24 26 28 30 32 34 24 25 26 27 28 29 30 +25c +85c -55c frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 24 25 26 27 28 29 30 +25c +85c -55c frequency (ghz) return loss (db) p1db vs. temperature p1db vs. supply voltage 21 23 25 27 29 31 24 25 26 27 28 29 30 +25c +85c -55c frequency (ghz) p1db (dbm) 21 23 25 27 29 31 24 25 26 27 28 29 30 6.0v 5.5v 5.0v frequency (ghz) p1db (dbm)
linear & power amplifiers - chip 3 3 - 144 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output ip3 vs. supply current, pout/tone = +16 dbm output ip3 vs. temperature, pout/tone = +16 dbm psat vs. supply current (idd) p1db vs. supply current (idd) HMC863 v00.1109 gaas phemt mmic ? watt power amplifier, 24 - 29.5 ghz 21 23 25 27 29 31 24 25 26 27 28 29 30 350ma 375ma 400ma frequency (ghz) p1db (dbm) 30 34 38 42 46 24 25 26 27 28 29 30 +25c +85c -55c frequency (ghz) ip3 (dbm) 21 23 25 27 29 31 24 25 26 27 28 29 30 350ma 375ma 400ma frequency (ghz) psat (dbm) 30 34 38 42 46 24 25 26 27 28 29 30 350ma 375ma 400ma frequency (ghz) ip3 (dbm) psat vs. temperature psat vs. supply voltage 21 23 25 27 29 31 24 25 26 27 28 29 30 +25c +85c -55c frequency (ghz) psat (dbm) 21 23 25 27 29 31 24 25 26 27 28 29 30 6.0v 5.5v 5.0v frequency (ghz) psat (dbm)
linear & power amplifiers - chip 3 3 - 145 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com reverse isolation vs. temperature HMC863 v00.1109 gaas phemt mmic ? watt power amplifier, 24 - 29.5 ghz output power, gain & pae @ 27 ghz output ip3 vs. supply voltage, pout/tone = +16 dbm output im3 @ vdd = +5v output im3 @ vdd = +5.5v output im3 @ vdd = +6v 0 5 10 15 20 25 30 35 -16 -12 -8 -4 0 4 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) 30 34 38 42 46 23 24 25 26 27 28 29 30 6.0v 5.5v 5.0v frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 9 11131517192123 24 ghz 26 ghz 28 ghz 29 ghz pout/tone (dbm) im3 (dbc) -60 -50 -40 -30 -20 -10 0 24 25 26 27 28 29 30 +25c +85c -55c frequency (ghz) reverse isolation (db) 0 10 20 30 40 50 60 9 11131517192123 24 ghz 26 ghz 28 ghz 29 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 9 11131517192123 24 ghz 26 ghz 28 ghz 29 ghz pout/tone (dbm) im3 (dbc)
linear & power amplifiers - chip 3 3 - 146 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC863 v00.1109 gaas phemt mmic ? watt power amplifier, 24 - 29.5 ghz absolute maximum ratings drain bias voltage (vdd) +6.5v rf input power (rfin) +26 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 37.2 mw/c above 85 c) 2.42w thermal resistance (channel to die bottom) 26.9 c/w storage temperature -65 to 150 c operating temperature -55 to +85 c vdd (v) idd (ma) +5.0 375 +5.5 375 +6.0 375 note: ampli er will operate over full voltage ranges shown above vgg adjusted to achieve idd = 375ma at +5.5v typical supply current vs. vdd electrostatic sensitive device observe handling precautions power dissipation gain & power vs. supply voltage @ 27 ghz gain & power vs. supply current @ 27 ghz 25 26 27 28 29 30 350 360 370 380 390 400 gain (db) p1db (dbm) psat (dbm) idd (ma) gain (db), p1db (dbm), psat (dbm) 1 1.5 2 2.5 3 -18 -15 -12 -9 -6 -3 0 3 6 24 ghz 25 ghz 26 ghz 27 ghz 28 ghz input power (dbm) power dissipation (w) 25 26 27 28 29 30 5 5.2 5.4 5.6 5.8 6 gain (db) p1db (dbm) psat (dbm) vdd (v) gain (db), p1db (dbm), psat (dbm)
linear & power amplifiers - chip 3 3 - 147 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad descriptions pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms. 2vgg gate control for pa. adjust vgg to achieve recommended bias current. external bypass caps 100pf, 0.1 f and 4.7 f are required. 3vdd drain bias for ampli er. external bypass caps 100pf, 0.1 f and 4.7uf are required 4rfout this pad is ac coupled and matched to 50 ohms. HMC863 v00.1109 gaas phemt mmic ? watt power amplifier, 24 - 29.5 ghz outline drawing notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond pad is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. 8. overall die size .002 die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
linear & power amplifiers - chip 3 3 - 148 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram HMC863 v00.1109 gaas phemt mmic ? watt power amplifier, 24 - 29.5 ghz
linear & power amplifiers - chip 3 3 - 149 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab HMC863 v00.1109 gaas phemt mmic ? watt power amplifier, 24 - 29.5 ghz
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